top view summary v (br)dss =-20v; r ds(on) =0.27 v ; i d =-1.7a description this new generation of high density mosfets from zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features low on-resistance fast switching speed low threshold low gate drive low profile soic package applications dc - dc converters power management functions disconnect switches motor control ordering information device reel size (inches) tape width (mm) quantity per reel ZXMD63P02Xta 7 12mm embossed 1000 units ZXMD63P02Xtc 13 12mm embossed 4000 units device marking zxm63p02 dual 20v p-channel enhancement mode mosfet msop8 ZXMD63P02X 1 issue 1 - june 2004
ZXMD63P02X 2 thermal resistance parameter symbol value unit junction to ambient (a)(d) r q ja 143 c/w junction to ambient (b)(d) r q ja 100 c/w junction to ambient (a)(e) r q ja 120 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t < 10 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. (d) for device with one active die. (e) for device with two active die running at equal power. absolute maximum ratings. parameter symbol limit unit drain-source voltage v dss -20 v gate- source voltage v gs 12 v continuous drain current (v gs =4.5v; t a =25c)(b)(d) (v gs =4.5v; t a =70c)(b)(d) i d -1.7 -1.35 a pulsed drain current (c)(d) i dm -9.6 a continuous source current (body diode)(b)(d) i s -1.4 a pulsed source current (body diode)(c)(d) i sm -9.6 a power dissipation at t a =25c (a)(d) linear derating factor p d 0.87 6.9 w mw/c power dissipation at t a =25c (a)(e) linear derating factor p d 1.04 8.3 w mw/c power dissipation at t a =25c (b)(d) linear derating factor p d 1.25 10 w mw/c operating and storage temperature range t j :t stg -55 to +150 c issue 1 - june 2004
0.1 10 100 0.0001 0.1 100 0 80 160 v ds - drain-source voltage (v) safe operating area 0.1 10 100 id - drain current (a) dc 1s 100ms d=0.1 d=0.2 thermal resistance (c/w) 120 60 d=0.05 0 pulse width (s) transient thermal impedance max power dissipation (watts) 1.4 0.8 0 t - temperature () derating curve refer note (b) single pulse d=0.5 10ms 1ms 100s pulse width (s) 100 40 80 20 0.01 10 0.001 1 160 80 0 0.0001 1000 0.001 0.01 0.1 1 10 transient thermal impedance thermal resistance (c/w) d=0.5 d=0.2 d=0.1 d=0.05 single pulse 100 140 60 120 100 40 20 refer note (a) 1.2 0.6 1.0 0.4 0.2 60 140 20 40 100 120 1 1 refer note (a) refer note (a) refer note (b) characteristics 3 ZXMD63P02X issue 1 - june 2004
ZXMD63P02X 4 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss -20 v i d =-250 m a, v gs =0v zero gate voltage drain current i dss -1 m a v ds =-20v, v gs =0v gate-body leakage i gss 100 na v gs = 12v, v ds =0v gate-source threshold voltage v gs(th) -0.7 v i d =-250 m a, v ds = v gs static drain-source on-state resistance (1) r ds(on) 0.27 0.40 w w v gs =-4.5v, i d =-1.2a v gs =-2.7v, i d =-0.6a forward transconductance (3) g fs 1.3 s v ds =-10v,i d =-0.6a dynamic (3) input capacitance c iss 290 pf v ds =-15 v, v gs =0v, f=1mhz output capacitance c oss 120 pf reverse transfer capacitance c rss 50 pf switching(2) (3) turn-on delay time t d(on) 3.4 ns v dd =-10v, i d =-1.2a r g =6.0 w , r d =8.3 w (refer to test circuit) rise time t r 9.6 ns turn-off delay time t d(off) 16.4 ns fall time t f 20.4 ns total gate charge q g 5.25 nc v ds =-16v,v gs =-4.5v, i d =-1.2a (refer to test circuit) gate-source charge q gs 1.0 nc gate drain charge q gd 2.25 nc source-drain diode diode forward voltage (1) v sd -0.95 v t j =25c, i s =-1.2a, v gs =0v reverse recovery time (3) t rr 21.7 ns t j =25c, i f =-1.2a, di/dt= 100a/ m s reverse recovery charge(3) q rr 9.6 nc (1) measured under pulsed conditions. width=300 m s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. issue 1 - june 2004
0.1 100 12.5 4 0.1 10 0.2 0.8 1.4 200 50 -100 0.1 10 100 -v ds - drain-source voltage (v) output characteristics 0.1 -i d - drain current (a) vds=-10v -i d - drain current (a) 10 0.1 -v gs - gate-source voltage (v) typical transfer characteristics r ds(on) - drain-source on-resistance ( w ) 10 1 -i d - drain current (a) on-resistance v drain current -i d - drain current (a) 0.1 -v ds - drain-source voltage (v) output characteristics normalised r ds(on) and v gs(th) 1.0 t j - junction temperature (c) normalised r ds(on) and v gs(th) v temperature -i sd - reverse drain current (a) 10 1 0.01 -v sd - source-drain voltage (v) source-drain diode forward voltage t=150c t=25c +150c t=150 c vgs=-4.5v t=25 c rds(on) id=-1.2a vgs=vds id=-250ua vgs(th) 1.5 3 23.5 1 0.4 1.0 0.6 1.2 0.1 1 -vgs 3v 2.5v 2v 3.5v 4v 4.5v 5v +25 c 1 110 10 0.4 1.2 0.6 0.8 1.4 1.6 150 0 -50 100 0.1 1 vgs=-3v vgs=-5v 5v 4.5v 4v 10 1 2v -vgs 2.5v 3v 3.5v 4.5 typical characteristics 5 ZXMD63P02X issue 1 - june 2004
typical characteristics basic gate charge waveform gate charge test circuit switching time waveforms switching time test circuit 0.1 10 100 0 4 4.5 -v ds - drain source voltage (v) capacitance v drain-source voltage 0 500 c - capacitance (pf) id=-1.2a vgs - gate-source voltage (v) 5 0 q -charge (nc) gate-source voltage v gate charge ciss coss crss vgs=0v f=1mhz 700 200 400 600 100 300 1 4.5 4 3.5 2.5 vds=-16v 3.5 3 2.5 2 1.5 1 0.5 123 1.5 0.5 ZXMD63P02X 6 issue 1 - june 2004
ZXMD63P02X h e d e x 6 a a1 l c 1 234 5 6 7 8 q b conforms to jedec mo-187 iss a package dimensions dim millimetres inches min max min max a 1.10 0.043 a1 0.05 0.15 0.002 0.006 b 0.25 0.40 0.010 0.016 c 0.13 0.23 0.005 0.009 d 2.90 3.10 0.114 0.122 e 0.65 bsc 0.0256 bsc e 2.90 3.10 0.114 0.122 h 4.90 bsc 0.193 bsc l 0.40 0.70 0.016 0.028 q 0 6 0 6 pad layout details 7 zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong zetex plc 1999 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 internet:http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned . the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. issue 1 - june 2004
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